The　effects　of　high-energy　(1　MeV)　electron　irradiation　on　the　electrical　and　trapping　properties　of　AlGaN/GaN　high-electron-mobility　transistors　(HEMTs)　are　investigated　systematically.　When　the　irradiation　fluence　increases　from　5　x　10(12)/cm(2)　to　1　x　10(14)/cm(2),　the　drain-source　current　also　increases　and　the　threshold　voltage　shifts　toward　the　negative　direction.　A　Raman　spectroscopy　study　shows　that　electron　irradiation　induces　strain　relaxation　in　the　HEMT,　which　results　in　an　improvement　in　the　device＇s　electrical　characteristics.　In　particular,　three　traps　in　the　device　are　identified　using　the　voltage-transient　method　and　the　trapping　effects　in　the　HEMT　are　investigated　after　the　final　irradiation.　When　compared　with　the　transient　voltages　during　the　pristine　stage,　the　absolute　amplitudes　of　the　three　traps　in　the　device　decrease　after　irradiation,　which　indicates　a　reduction　in　the　density　of　the　traps.　Furthermore,　it　is　proposed　that　the　time　constants　of　the　three　traps　increase　while　the　energy　levels　remain　unchanged,　which　is　ascribed　to　the　strain　relaxation　and　the　structural　ordering　of　the　defects　after　electron　irradiation.　The　observed　changes　in　the　trapping　behaviors　are　consistent　with　the　improvement　in　the　electrical　properties　of　the　device　and　the　shift　in　the　Raman　spectra.