The　SiO2/SiNx　dielectric　film　stacks　deposited　by　inductively　coupled　plasma　chemical　vapor　deposition　(ICP-CVD)　are　employed　on　the　top　of　the　oxide-confined　vertical-cavity　surface-emitting　lasers　(VCSELs).　The　reflecting　mirror　characteristics　of　the　dielectric　films　are　measured　with　varying　numbers　of　pairs　from　4　to　12.　The　prepared　devices　have　low　threshold　current　of　0.3　mA,　single-mode　peak　power　of　1.4　mW　at　room　temperature.　The　thermal　resistance　of　the　device　depending　on　ambient　temperature　is　estimated　according　to　the　relationship　of　wavelength　shift　and　dissipated　power,　allowing　us　to　extract　the　actual　temperature　in　active　region　and　the　temperature　dependence　of　the　output　characteristics　of　the　VCSEL.　The　beam　property　of　the　device　is　characterized　by　the　far　field　pattern　(FFP).　Depending　on　the　drive　current,　the　average　divergence　angles　of　the　output　beam　estimated　from　the　full-width-half-maximum　(FWHM)　of　the　FFP　varies　between　20.4　degrees　and　21.2　degrees.　Furthermore,　polarization-controlled　single　mode　emission　is　achieved　by　introducing　a　built-in　grating　into　the　VCSEL　with　orthogonal　polarization　suppression　ratio　(OPSR)　around　19　dB.