The　Huang-Pair　is　a　novel　hybrid　diode　concept　based　on　the　integration　of　a　low　forward　voltage　drop,　low　voltage　rating　diode　with　a　high　voltage　majority　carrier　switch,　such　as　a　silicon　carbide　(SiC)　Junction　gate　field-effect　transistor　(JFET).　A　1200　V　Huang-Pair　is　developed　to　demonstrate　the　concept　in　which　a　low　voltage　Si　diode　is　paired　with　a　1200　V　SiC　JEFT,　resulting　in　a　low-forward　voltage,　low　reverse　recovery　high　voltage　diode.　The　Huang-Pair　is　a　two　terminal　device　and　its　performance　tradeoff　between　forward　voltage　drop,　leakage　current,　and　reverse　recovery　can　be　conducted　between　two　discrete　devices,　which　is　more　flexible.　The　Huang-Pair　concept　can　also　be　realized　by　SiC　MOSFET　and　gallium　nitride　MOSFET,　and　it　can　be　applied　to　different　voltage　classes.