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作者:

Li, Songyu (Li, Songyu.) | Ma, Yang (Ma, Yang.) | Ouedraogo, Nabonswende Aida Nadege (Ouedraogo, Nabonswende Aida Nadege.) | Liu, Famin (Liu, Famin.) | You, Congya (You, Congya.) | Deng, Wenjie (Deng, Wenjie.) | Zhang, Yongzhe (Zhang, Yongzhe.) (学者:张永哲)

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摘要:

Two-dimensional layered transition metal dichalcogenides (TMDCs) have demonstrated a huge potential in the broad fields of optoelectronic devices, logic electronics, electronic integration, as well as neural networks. To take full advantage of TMDC characteristics and efficiently design the device structures, one of the most key processes is to control their p-In-type modulation. In this review, we summarize the p-/n-type modulation of TMDCs based on diverse strategies consisting of intrinsic defect tailoring, substitutional doping, surface charge transfer, chemical intercalation, electrostatic modulation, and dielectric interface engineering. The modulation mechanisms and comparisons of these strategies are analyzed together with a discussion of their corresponding device applications in electronics and optoelectronics. Finally, challenges and outlooks for p-/n-type modulation of TMDCs are presented to provide references for future studies.

关键词:

doping method p-/n-type modulation optoelectronic devices electronic devices transition metal dichalcogenides

作者机构:

  • [ 1 ] [Li, Songyu]Beihang Univ, Sch Phys, Beijing 100191, Peoples R China
  • [ 2 ] [Liu, Famin]Beihang Univ, Sch Phys, Beijing 100191, Peoples R China
  • [ 3 ] [Ma, Yang]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Ouedraogo, Nabonswende Aida Nadege]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [You, Congya]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 6 ] [Deng, Wenjie]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 7 ] [Zhang, Yongzhe]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China

通讯作者信息:

  • 张永哲

    [Liu, Famin]Beihang Univ, Sch Phys, Beijing 100191, Peoples R China;;[Zhang, Yongzhe]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China

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来源 :

NANO RESEARCH

ISSN: 1998-0124

年份: 2021

期: 1

卷: 15

页码: 123-144

9 . 9 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:72

JCR分区:1

被引次数:

WoS核心集被引频次: 19

SCOPUS被引频次: 24

ESI高被引论文在榜: 0 展开所有

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