A　new　method　is　proposed　for　the　measurement　of　the　junction　temperature　of　insulated　gate　bipolar　transistors　(IGBTs)　during　operation.　The　application　of　this　method　overcomes　the　problems　arising　from　the　complexity　of　measurement　circuits　or　the　difficulty　of　tests.　The　proposed　measurement　method　uses　the　turn-on　Miller　plateau　duration　(t(mon)),　i.e.,　the　duration　from　the　first　rising　edge　to　the　second　rising　edge　of　the　gate-emitter　voltage,　of　an　IGBT.　The　obtained　results　show　that　t(mon)　is　strongly　linear　with　respect　to　temperature.　For　comparison,　the　temperature-sensitive　electrical　parameters　(TSEPs)　turn-off　Miller　plateau　duration　(i.e.,　the　duration　between　the　two　falling　edges　of　the　Vge-off　curve)　were　also　measured.　The　obtained　results　show　that　t(mon)　exhibits　a　high　sensitivity　that　permits　accurate　determination　of　the　junction　temperatures　of　IGBTs.