The　worm-like　AlN　nanowires　are　fabricated　by　the　plasma-enhanced　chemical　vapor　deposition　(PECVD)　on　Si　substrates　through　using　Al　powder　and　N-2　as　precursors,　CaF2　as　fluxing　medium,　Au　as　catalyst,　respectively.　The　as-grown　worm-like　AlN　nanowires　each　have　a　polycrystalline　and　hexagonal　wurtzite　structure.　Their　diameters　are　about　300　nm,　and　the　lengths　are　over　10　mu　m.　The　growth　mechanism　of　worm-like　AlN　nanowires　is　discussed.　Hydrogen　plasma　plays　a　very　important　role　in　forming　the　polycrystalline　structure　and　rough　surfaces　of　worm-like　AlN　nanowires.　The　worm-like　AlN　nanowires　exhibit　an　excellent　field-emission　(FE)　property　with　a　low　turn-on　field　of　4.5　V/mu　m　at　a　current　density　of　0.01　mA/cm(2)　and　low　threshold　field　of　9.9　V/mu　m　at　1　mA/cm(2).　The　emission　current　densities　of　worm-like　AlN　nanowires　each　have　a　good　stability.　The　enhanced　FE　properties　of　worm-like　AlN　nanowires　may　be　due　to　their　polycrystalline　and　rough　structure　with　nanosize　and　high　aspect　ratio.　The　excellent　FE　properties　of　worm-like　AlN　nanowires　can　be　explained　by　a　grain　boundary　conduction　mechanism.　The　results　demonstrate　that　the　worm-like　AlN　nanowires　prepared　by　the　proposed　simple　and　the　PECVD　method　possesses　the　potential　applications　in　photoelectric　and　field-emission　devices.