Defect　manipulation　plays　an　important　role　in　regulating　luminescence　efficiency　and　electric　performance　of　wide　bandgap　semiconductor　devices.　ZnO　possesses　complex　defects,　resulting　in　a　bottleneck　for　p-type　doping　due　to　self-compensation.　In　this　article,　we　propose　a　strategy　to　manipulate　the　defects　in　ZnO　microwires　(MWs)　via　thermal-assisted　UV-photon　irradiation.　With　this　strategy,　the　photoluminescence　(PL)　and　electroluminescence　(EL)　of　the　near　band　edge　emission　are　enhanced.　The　improvement　in　radiation　efficiency　is　attributed　to　the　recrystallization　of　the　ZnO　MWs,　by　which　the　oxygen　vacancy　and　zinc　interstitial　defects　are　suppressed.　The　combination　of　UV　photo-chemical　and　thermal　quenching　for　defect　regulation　is　confirmed,　for　the　first　time,　by　PL　and　EL　spectra.　The　work　provides　insights　into　defect　engineering　for　luminescence　efficiency　improvement　in　wide　bandgap　semiconductor　devices.