In　this　paper,　the　RF　power　performance　and　surface　temperature　distributions　for　a　multi-finger　power　hetero-junction　bipolar　transistor　(HBT)　with　non-uniform　emitter　finger　spacing　(NUEFS)　without　the　use　of　emitter-ballasting-resistor　(EBR)　are　measured,　and　are　compared　with　a　multi-finger　power　HBT　with　EBR.　The　experiment　results　show　that　for　the　multi-finger　power　HBT　with　NUEFS,　the　highest　surface　temperature　is　lowered,　the　uniformity　of　surface　temperature　distributions　measured　by　US　QFI　Infrared　TMS　is　improved,　the　RF　power　gain　and　power-added-efficiency　(PAE)　are　increased　compared　with　the　multi-finger　power　HBT　with　EBR　respectively.　These　results　could　be　attributed　to　the　improvement　in　positive　thermoelectric　feedback　and　thermal　coupling　effects　among　the　fingers,　and　the　riddance　of　adverse　impact　from　emitter-ballasting-resistor　used　in　traditional　power　HBT.