To　understand　the　effects　of　thermal　annealing　on　the　structure　of　GexAsySe1-x-y　thin　films,　the　thermal　evolution　of　these　films　was　measured　by　the　in　situ　X-ray　diffraction　(XRD)　at　different　temperature　(773　K　or　1073　K)　in　a　vacuum　(10(-1)　Pa)　environment.　The　entire　process　of　crystallization　can　be　observed　by　using　in　situ　XRD,　which　is　from　the　appearance　of　a　crystal　structure　to　melting　liquid-state　and　ultimately　to　the　disappearance　of　the　amorphous　structure.　In　the　crystallized　process,　the　corresponding　state-transition　temperatures　T-x　(the　onset　crystallization　temperature),　T-l　(the　transition　temperature　from　glassy-state　to　liquid-state),　T-p　(peak　crystallization　temperature)　are　linear　with　MCN　(Mean　Coordination　Number).　In　order　to　obtain　information　about　changes　in　the　amorphous　structural　origin　of　the　anneal-induced　material,　the　samples　were　analyzed　by　in　situ　Raman　spectroscopy.　Analysis　of　the　results　through　decomposing　the　Raman　spectra　into　different　structural　units　showed　that　the　Ge-Ge,　As-As,　or　Se-Se　homopolar　bonds　as　the　nonequilibrium　minority　carriers　could　be　found　in　films.　It　suggests　that　the　formation　of　these　bonds　cannot　be　completely　suppressed　in　any　case,　as　one　falls　and　another　rises.