Investigation on filling method and thermal reliability of Sn58Bi-TSV - 文章详情页

作者：

Wang, Jiaojiao (Wang, Jiaojiao.) | Ma, Limin (Ma, Limin.) | Wang, Yishu (Wang, Yishu.)

收录：

EI Scopus SCIE

摘要：

With　the　rapid　development　of　micro-electronics　technology　and　the　demand　of　consumers　for　minimized　and　functional　electronic　products,　the　two-dimensional　(2D)　technology　based　on　Moore＇s　law　has　been　facing　serious　challenges.　Three-dimensional　(3D)　packaging　technology　gradually　becomes　the　focus　of　research　and　through　silicon　via　(TSV)　is　one　of　the　key　technologies　of　3D　packaging.　Currently,　Cu　is　the　main　filling　material　for　TSV,　but　Cu-TSV　is　prone　to　serious　thermal　reliability　problems,　such　as　creep,　cracks　and　voids,　which　will　eventually　lead　to　failure.　Filling　TSV　with　solders　has　become　one　of　the　potential　alternative　technologies,　but　there　are　few　experimental　studies　on　its　thermal　reliability.　In　this　paper,　Sn58Bi-TSV　was　completed,　and　the　filling　effect　was　detected　by　SEM.　In　addition,　thermal　shock　test　and　aging　test　were　used　to　analyze　the　thermal　reliability　of　Sn58Bi-TSV.　(C)　2021　Elsevier　B.V.　All　rights　reserved.

关键词：

TSV Semiconductors Electronic materials Sn58Bi Thermal properties

作者机构：

[ 1 ] [Wang, Jiaojiao]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
[ 2 ] [Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
[ 3 ] [Wang, Yishu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
[ 4 ] [Ma, Limin]Beijing Univ Technol, Key Lab Adv Funct Mat, Educ Minist China, Beijing 100124, Peoples R China
[ 5 ] [Wang, Yishu]Beijing Univ Technol, Key Lab Adv Funct Mat, Educ Minist China, Beijing 100124, Peoples R China

通讯作者信息：

[Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China;;[Ma, Limin]Beijing Univ Technol, Key Lab Adv Funct Mat, Educ Minist China, Beijing 100124, Peoples R China

电子邮件地址：

malimin@bjut.edu.cn

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