Strain　engineering　is　proposed　to　be　an　effective　technology　to　tune　the　properties　of　two-dimensional　(2D)　transition　metal　dichalcogenides　(TMDCs).　Conventional　strain　engineering　techniques　(e.g.,　mechanical　bending,　heating)　cannot　conserve　strain　due　to　their　dependence　on　external　action,　which　thereby　limits　the　application　in　electronics.　In　addition,　the　theoretically　predicted　strain-induced　tuning　of　electrical　performance　of　TMDCs　has　not　been　experimentally　proved　yet.　Here,　a　facile　but　effective　approach　is　proposed　to　retain　and　tune　the　biaxial　tensile　strain　in　monolayer　MoS2　by　adjusting　the　process　of　the　chemical　vapor　deposition　(CVD).　To　prove　the　feasibility　of　this　method,　the　strain　formation　model　of　CVD　grown　MoS2　is　proposed　which　is　supported　by　the　calculated　strain　dependence　of　band　gap　via　the　density　functional　theory　(DFT).　Next,　the　electrical　properties　tuning　of　strained　monolayer　MoS2　is　demonstrated　in　experiment,　where　the　carrier　mobility　of　MoS2　was　increased　by　two　orders　(similar　to　0.15　to　similar　to　23　cm(2).V-1.s(-1)).　The　proposed　pathway　of　strain　preservation　and　regulation　will　open　up　the　optics　application　of　strain　engineering　and　the　fabrication　of　high　performance　electronic　devices　in　2D　materials.