In　the　paper,　the　effect　of　Ge　profiles　on　the　performance　of　lateral　SiGe　heterojunction　bipolar　transistor　(LHBT)　on　silicon-on-insulator　(SOT)　substrate　with　positive　bias　voltage　has　been　studied.　With　the　aid　of　substrate　bias　(V-S),　the　peak　current　gain　(beta)　of　LHBT　with　trapezoidal　Ge　profile　is　obviously　enhanced,　which　is　almost　as　same　as　LHBT　with　uniform　Ge　profile.　At　the　same　time,　the　beta　of　LHBT　with　trapezoidal　Ge　profile　is　kept　as　temperature　increases.　However,　the　beta　of　LHBT　with　uniform　Ge　profile　is　decreased　as　temperature　increases.　Furthermore,　for　LHBT　with　trapezoidal　Ge　profile,　the　peak　junction　temperature　is　lowered　by　20.51K　and　the　cut-off　frequency　(f(T))　is　also　improved　by　158.4　GHz　when　compared　with　that　of　the　uniform　one.　The　results　show　that　LHBTs　with　trapezoidal　Ge　profile　could　achieve　the　superior　electrical,　thermal,　and　high　frequency　performance　at　the　same　time,　which　provides　useful　guidelines　to　design　SiGe　HBTs　for　microwave　and　digital　or　mixed-signal　applications.