In　this　study,　a　model　for　predicting　the　electromigration　lifetime　of　copper　pillar　bumps　in　ceramic　packaging　device　was　established.　In　order　to　determine　the　relevant　parameters　in　the　Black　model　of　electromigration　lifetime　prediction,　three　current　density　levels,　2.5x10(4)A/cm(2),　3x10(4)A/cm(2)　and　3.5x10(4)A/cm(2),　were　selected　to　conduct　the　electromigration　tests　on　the　Cu　pillar　bump　in　ceramic　package　samples　at　ambient　temperatures　of　125　degrees　C　and　160　degrees　C　respectively.　SEM　was　used　to　observe　the　failure　mode　of　bumps　under　different　temperature　and　current　density.　The　experiment　of　on-line　monitoring　of　the　bump　resistance　was　used　to　monitor　the　resistance　information　in　real　time,　and　then　obtain　the　electromigration　lifetime　of　the　copper　pillar　bumps　under　each　load　condition.　By　determining　the　current　influence　index　n　and　the　failure　activation　energy　Q,　this　paper　defines　the　black　model　of　the　electromigration　lifetime　prediction　of　the　copper　pillar　bumps　in　the　ceramic　package.