Through-Silicon-Via　(TSV)　is　a　crucial　technique　developed　for　3D　integrated　circuits　(3D　ICs),　which　enables　to　improve　device　performance　and　allows　for　heterogeneous　integration　schemes.　However,　the　mismatch　of　coefficient　of　thermal　expansion　(CTE)　between　TSV-Cu　and　Silicon　(Si)　substrate　leads　to　the　cracking　behvaiors　easily,　especially,　when　cyclic　thermal　loading　exists　during　the　cycling　of　different　processes.　Correspondingly,　the　plastic　deformation　occurs　during　the　thermal　cycling,　which　could　lead　to　the　formation　of　plastic　deformation　such　as　residual　stress　and　residual　strain　along　the　interfaces　between　TSV-Cu　and　Si　substrate　as　well　as　interface　between　Cu　and　the　dielectrics　(e.g.,　SiO2).　Cracks　can　be　formed　between　those　interfaces,　which　generates　reliability　issues.　Hence,　the　purpose　of　this　paper　is　to　study　the　effect　of　the　cyclic　plastic　deformation　on　the　J-integral　for　TSV　structure　during　cyclic　thermal　loading.　2D　FE　models　of　TSV　structure　are　constructed　to　perform　the　numerical　analysis,　in　which　a　crack　is　embedded　in　the　TSV-Cu/SiO2　interface.　A　novel　numerical　method　is　developed　to　compute　J-integral　for　TSV-Cu/SiO2　interface　crack　under　cyclic　thermal　load.　The　effect　of　the　cyclic　plastic　deformation　on　J-integral　for　TSV　structure　are　presented.