The　purpose　of　this　paper　is　to　explore　the　failure　mechanism　of　650V　state-of-the-art　SiC　double-trench　MOSFETs　under　short-circuit　(SC)　test.　The　experimental　results　demonstrate　drain　voltage　(VDS)　has　a　pronounced　influence　on　the　SC　capability　of　the　device,　and　different　VDS　will　lead　to　discrepant　failure　mechanisms.　The　gate-to-source　oxide　rupture　is　most　likely　to　occur　when　a　lower　VDS　is　imposed　on　the　studied　device.　However,　the　breakdown　of　the　gate-to-source　and　drain-to-source　takes　place　simultaneously　with　a　higher　VDS.　And　the　reason　will　be　discussed　in　this　work.