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摘要:
VCSELs using SiO2/Si3N4 dielectric DBRs are demonstrated. The devices operating near 894 nm have low threshold current of 0.3 mA, single-mode peak power of 2.15 mW, side-mode suppression ratio >30 dB under the full range of bias currents.
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来源 :
2020 IEEE PHOTONICS CONFERENCE (IPC)
ISSN: 2374-0140
年份: 2020
语种: 英文
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