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氮化镓基谐振腔发光二极管发展近况
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Translated Title
Development of GaN-Based Resonant Cavity Light Emitting Diodes
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TN3
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WF:perioarticalQKV20172018101800056739
Language
Chinese
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Source :
光电子
Year: 2017
Issue: 4
Volume: 7
Page: 127-140
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ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: -1
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30 Days PV: 3
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