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0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA
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EM simulationcurrent reuseemitter inductordual-bandSiGe HBT
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TN41
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WF:perioarticalQK201300104123
Language
Chinese
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Related Article:
2011,IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
2013,Journal of Semiconductors
2015,MICROELECTRONICS JOURNAL
2012,2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
Source :
半导体学报
Year: 2013
Issue: 2
Page: 67-71
Cited Count:
WoS CC Cited Count: 0
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: -1
Chinese Cited Count:
30 Days PV: 3
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