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作者:

Qiu, Pingping (Qiu, Pingping.) | Wu, Bo (Wu, Bo.) | Fu, Pan (Fu, Pan.) | Li, Ming (Li, Ming.) | Yan, Weinian (Yan, Weinian.) | Jia, Ruiwen (Jia, Ruiwen.) | Xie, Yiyang (Xie, Yiyang.) | Kan, Qiang (Kan, Qiang.)

收录:

SCIE

摘要:

A novel method to realize single-transverse-mode emission by incorporating a built-in index guide is employed on vertical-cavity surface-emitting lasers (VCSELs) with a large oxide aperture. The etched index guide provides modal loss discrimination for mode selection and transverse optical field confinement for light propagating in the longitudinal direction. A single-transverse-mode VCSEL with side-mode suppression ratio >30 dB under the full range of bias currents is achieved. The thermal resistance of the device is lower than one half of the counterpart of the conventional GaAs-based single-mode VCSELs. Moreover, compared with an ordinary VCSEL with the same oxide aperture diameter, the beam quality of the device incorporated a built-in index guide has been significantly improved. The divergence angle of the output beam estimated from the full-width-half-maximum of the far-field pattern is as small as 9 degrees.

关键词:

Index guide Single transverse mode Thermal characteristic Vertical-cavity surface-emitting lasers

作者机构:

  • [ 1 ] [Qiu, Pingping]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 2 ] [Li, Ming]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 3 ] [Yan, Weinian]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 4 ] [Jia, Ruiwen]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 5 ] [Kan, Qiang]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 6 ] [Qiu, Pingping]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 7 ] [Li, Ming]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 8 ] [Yan, Weinian]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 9 ] [Jia, Ruiwen]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 10 ] [Kan, Qiang]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 11 ] [Qiu, Pingping]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 12 ] [Li, Ming]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 13 ] [Yan, Weinian]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 14 ] [Jia, Ruiwen]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 15 ] [Kan, Qiang]Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
  • [ 16 ] [Wu, Bo]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 17 ] [Fu, Pan]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 18 ] [Xie, Yiyang]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • [Kan, Qiang]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

电子邮件地址:

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相关关键词:

来源 :

OPTICS COMMUNICATIONS

ISSN: 0030-4018

年份: 2022

卷: 504

2 . 4

JCR@2022

2 . 4 0 0

JCR@2022

ESI学科: PHYSICS;

被引次数:

WoS核心集被引频次: 2

SCOPUS被引频次: 5

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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