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摘要:
Hexagonal tantalum pentoxide (delta-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 degrees C exhibited single crystal structure with the best crystalline quality. The heteroepitaxial relationship was determined as delta-Ta2O5 (0001)parallel to YVO4 (100) with delta-Ta2O5 [(1) over bar2 (1) over bar0]parallel to YVO4 [010] by the analysis of lattice structure. A diagrammatic sketch was proposed to illustrate the growth mechanism. For the best delta-Ta2O5 single-crystalline film, the band gap was estimated to be 4.33 eV and the average transmittance in the visible range exceeded 92%.
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来源 :
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN: 1369-8001
年份: 2021
卷: 135
4 . 1 0 0
JCR@2022
ESI学科: MATERIALS SCIENCE;
ESI高被引阀值:116
JCR分区:2
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