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作者:

Le, Yong (Le, Yong.) | Ma, Xiaochen (Ma, Xiaochen.) | Wang, Di (Wang, Di.) | Xiao, Hongdi (Xiao, Hongdi.) | Luan, Caina (Luan, Caina.) | Ma, Jin (Ma, Jin.)

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EI Scopus SCIE

摘要:

Hexagonal tantalum pentoxide (delta-Ta2O5) single-crystalline films were synthesized on Yttrium Vanadate (YVO4) (100) by metalorganic chemical vapor deposition (MOCVD) and post annealing process. The film annealed at 900 degrees C exhibited single crystal structure with the best crystalline quality. The heteroepitaxial relationship was determined as delta-Ta2O5 (0001)parallel to YVO4 (100) with delta-Ta2O5 [(1) over bar2 (1) over bar0]parallel to YVO4 [010] by the analysis of lattice structure. A diagrammatic sketch was proposed to illustrate the growth mechanism. For the best delta-Ta2O5 single-crystalline film, the band gap was estimated to be 4.33 eV and the average transmittance in the visible range exceeded 92%.

关键词:

Lattice structure Semiconductors Thin films Heteroepitaxy Optical properties

作者机构:

  • [ 1 ] [Le, Yong]Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
  • [ 2 ] [Wang, Di]Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
  • [ 3 ] [Xiao, Hongdi]Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
  • [ 4 ] [Luan, Caina]Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
  • [ 5 ] [Ma, Jin]Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
  • [ 6 ] [Ma, Xiaochen]Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China

通讯作者信息:

  • [Ma, Jin]Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China;;[Ma, Xiaochen]Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China

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来源 :

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

ISSN: 1369-8001

年份: 2021

卷: 135

4 . 1 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:116

JCR分区:2

被引次数:

WoS核心集被引频次: 5

SCOPUS被引频次: 5

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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