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作者:

Bai, Suping (Bai, Suping.) | Wan, Zhi (Wan, Zhi.) | Wan, Peiyuan (Wan, Peiyuan.) | Zhang, Hongda (Zhang, Hongda.) | Ma, Yongkuo (Ma, Yongkuo.) | Zhang, Xiaoyu (Zhang, Xiaoyu.) | Liu, Xu (Liu, Xu.) | Chen, Zhijie (Chen, Zhijie.)

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SCIE

摘要:

This paper presents a 9-bit 1 GS/s successive approximation register (SAR) analog-to-digital converter (ADC). In this hybrid architecture, the pseudo-pipeline operation is realized, which increases the sampling rate effectively. The ADC adopts two key technologies: the variable gain voltage-to-time converter (VTC), which ensures the linearity is not sacrificed; the segmented time-to-digital converter (STDC), which further improves the linearity of time domain quantization. The prototype ADC is simulated in a standard 65-nm CMOS process with an active area of 0.038 mm(2). The simulated SNDR and SFDR are 44.3 and 58 dB with a sampling rate of 1 GS/s. The FoMW and FoMS are 24.7 fJ/conv-step and 150.7 dB, respectively.

关键词:

analog-to-digital converter (ADC) high speed hybrid-domain quantization time-to-digital converter (TDC) voltage-to-time converter (VTC)

作者机构:

  • [ 1 ] [Bai, Suping]Changchun Univ Sci & Technol, Sch Electroopt Engn, Changchun 130022, Peoples R China
  • [ 2 ] [Wan, Zhi]Changchun Univ Sci & Technol, Sch Electroopt Engn, Changchun 130022, Peoples R China
  • [ 3 ] [Wan, Peiyuan]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang, Hongda]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Ma, Yongkuo]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Zhang, Xiaoyu]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Liu, Xu]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Chen, Zhijie]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • [Bai, Suping]Changchun Univ Sci & Technol, Sch Electroopt Engn, Changchun 130022, Peoples R China

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来源 :

ELECTRONICS

年份: 2021

期: 21

卷: 10

2 . 9 0 0

JCR@2022

ESI学科: ENGINEERING;

ESI高被引阀值:9

被引次数:

WoS核心集被引频次: 2

SCOPUS被引频次: 2

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 1

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