2D-layered　transition　metal　dichalcogenides　(TMDCs)　have　attracted　tremendous　interest　as　candidate　material　for　next-generation　nanoelectronics　because　of　their　atomically　layered　lattices.　However,　their　charge　modulation　based　on　chemical　doping　is　commonly　inefficient　owing　to　the　ultrathin　crystal　structures,　which　therefore　limits　their　applications　in　electronic　devices.　Here,　a　photoinduced　electrostatic　modulation　of　WSe2　field-effect　transistor　with　charge-trapping　layers　of　hexagonal-BN　(h-BN)/SiO2　is　achieved　for　both　n-　and　p-type　polarities,　which　demonstrates　a　large　on/off　ratio　exceeding　10(6).　This　electrostatic　modulation　of　WSe2　performs　a　reversible　and　high　carrier　regulation　from　an　electron　density　of　3　x　10(12)　cm(-2)　to　a　hole　density　of　1.5　x　10(12)　cm(-2).　Through　this　facile　and　powerful　approach,　a　p-n　homojunction　rectifier　and　a　complementary　metal-oxide-semiconductor　inverter　are　successfully　prepared　and　perform　the　functions　of　AC-DC　conversion　and　cascadable　logic　NOT.　Consequently,　these　results　provide　a　huge　potential　for　wide　applications　of　TMDC-based　logic　electronics.