A　novel　split-gate-trench　MOSFET　integrated　with　normal　gate　and　built-in　channel　diode　(BCD)　in　the　same　trench　is　proposed　and　simulated　with　Sentaurus　TCAD　in　this　paper.　Compared　with　the　conventional　SGT　MOSFET　(C-SGT　MOS)　and　conventional　SGT　MOSFET　with　built-in　channel　diode　(CBCD-SGT　MOS),　the　proposed　MOSFET　exhibits　superior　performances,　such　as　smaller　turn-on　voltage　and　lower　reverse　recovery　charges　when　working　in　the　third　quadrant,　and　reduced　gate　charge　and　gate-to-drain　charge　when　working　in　the　first　quadrant.　With　the　negligible　degradation　of　the　on-state　resistance,　significant　improvements　in　the　figures　of　merit　can　be　obtained.　What＇s　more,　obvious　uniform　forward　and　reverse　conduction　current　distribution　of　proposed　structure　is　observed　compared　to　CBCD-SGT　MOS　although　two　types　of　devices　are　both　featuring　BCD　structure,　which　could　increase　the　robustness　of　device　when　working　in　high-power　and　high-frequency　applications.