Ta-doped　Ga2O3　(Ga2O3:Ta)　epitaxial　films　were　grown　on　SrTiO3　(100)　substrates　via　an　MOCVD　system.　Solar　blind　ultraviolet　(UV)　detectors　with　a　metal-semiconductor-metal　structure　were　fabricated　based　on　the　beta-Ga2O3:Ta　films,　and　the　effects　of　Ta　doping　concentration　on　the　photo　response　were　investigated.　The　surface　morphology,　composition　and　band　gap　of　the　films　were　characterized.　The　beta-Ga2O3:Ta　UV　detectors　showed　photo　response　characteristics　under　222　nm　deep　UV　light.　As　the　Ta　doping　concentration　increased,　the　responsivity　of　the　detector　increased　significantly.　For　the　1.5　at.%　Ta　doped　UV　detector,　the　responsivity　under　222　nm　UV　light　at　8　V　bias　reached　8.23　A　W-1,　and　the　light-dark　current　ratio　is　close　to　10(3).　Moreover,　the　responsive　rise　time　(T-r1/T-r2)　and　decay　time　(T-d1/T-d2)　at　1　V　bias　were　as　short　as　0.37　s/0.38　s　and　0.41s/0.85　s,　respectively.　Ta　doping　significantly　improves　the　performance　of　beta-Ga2O3　ultraviolet　detectors,　which　may　be　a　feasible　method　to　expand　its　application　potential.