Magnetic　van　der　Waals　(vdW)　materials　possess　versatile　spin　configurations　stabilized　in　reduced　dimensions.　One　magnetic　order　is　the　interlayer　antiferromagnetism　in　A-type　vdW　antiferromagnet,　which　may　be　effectively　modified　by　the　magnetic　field,　stacking　order,　and　thickness　scaling.　However,　atomically　revealing　the　interlayer　spin　orientation　in　the　vdW　antiferromagnet　is　highly　challenging,　because　most　of　the　material　candidates　exhibit　an　insulating　ground　state　or　instability　in　ambient　conditions.　Here,　we　report　the　layer-dependent　interlayer　antiferromagnetic　spin　reorientation　in　air-stable　semiconductor　CrSBr　using　magnetotransport　characterization　and　first-principles　calculations.　We　reveal　an　odd-even　layer　effect　of　interlayer　spin　reorientation,　which　originates　from　the　competitions　among　interlayer　exchange,　magnetic　anisotropy　energy,　and　extra　Zeeman　energy　of　uncompensated　magnetization.　Furthermore,　we　quantitatively　constructed　the　layer-dependent　magnetic　phase　diagram　with　the　help　of　a　linear-chain　model　.　Our　work　uncovers　the　layer-dependent　interlayer　antiferromagnetic　spin　reorientation　engineered　by　magnetic　field　in　the　air-stable　semiconductor.