The　emerging　data-intensive　applications　in　optoelectronics　are　driving　innovation　toward　the　fused　integration　of　sensing,　memory,　and　computing　to　break　through　the　restrictions　of　the　von　Neumann　architecture.　However,　the　present　photodetectors　with　only　optoelectronic　conversion　functions　cannot　satisfy　the　growing　demands　of　the　multifunctions　required　in　single　devices.　Here,　a　novel　route　for　the　integration　of　non-volatile　memory　into　a　photodetector　is　proposed,　with　a　WSe2/h-BN　van　der　Waals　heterostructure　on　a　Si/SiO2　substrate　to　realize　in-memory　photodetection.　This　photodetector　exhibits　an　ultrahigh　readout　photocurrent　of　3.4　mu　A　and　photoresponsivity　of　337.8　A　W-1　in　the　solar-blind　wavelength　region,　together　with　an　extended　retention　time　of　more　than　10　years.　Furthermore,　the　charge-storage-based　non-volatile　mechanism　of　h-BN/SiO2　is　successfully　proven　through　a　novel　analysis　of　in　situ　optoelectronic　electron　energy-loss　spectroscopy.　These　results　represent　a　leap　forward　to　future　applications　and　insightful　mechanisms　of　in-memory　photodetection.