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作者:

Sun, Jie (Sun, Jie.) | Rattanasawatesun, Tanupong (Rattanasawatesun, Tanupong.) | Tang, Penghao (Tang, Penghao.) | Bi, Zhaoxia (Bi, Zhaoxia.) | Pandit, Santosh (Pandit, Santosh.) | Lam, Lisa (Lam, Lisa.) | Wasen, Caroline (Wasen, Caroline.) | Erlandsson, Malin (Erlandsson, Malin.) | Bokarewa, Maria (Bokarewa, Maria.) | Dong, Jichen (Dong, Jichen.) | Ding, Feng (Ding, Feng.) | Xiong, Fangzhu (Xiong, Fangzhu.) | Mijakovic, Ivan (Mijakovic, Ivan.)

收录:

EI Scopus SCIE

摘要:

Vertically oriented graphene (VG) has attracted attention for years, but the growth mechanism is still not fully revealed. The electric field may play a role, but the direct evidence and exactly what role it plays remains unclear. Here, we conduct a systematic study and find that in plasma-enhanced chemical vapor deposition, the VG growth preferably occurs at spots where the local field is stronger, for example, at GaN nanowire tips. On almost round-shaped nanoparticles, instead of being perpendicular to the substrate, the VG grows along the field direction, that is, perpendicular to the particles' local surfaces. Even more convincingly, the sheath field is screened to different degrees, and a direct correlation between the field strength and the VG growth is observed. Numerical calculation suggests that during the growth, the field helps accumulate charges on graphene, which eventually changes the cohesive graphene layers into separate three-dimensional VG flakes. Furthermore, the field helps attract charged precursors to places sticking out from the substrate and makes them even sharper and turn into VG. Finally, we demonstrate that the VG-covered nanoparticles are benign to human blood leukocytes and could be considered for drug delivery. Our research may serve as a starting point for further vertical two-dimensional material growth mechanism studies.

关键词:

nanoparticles 2D materials vertical graphene plasma-enhanced chemical vapor deposition GaN nanowires

作者机构:

  • [ 1 ] [Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
  • [ 2 ] [Rattanasawatesun, Tanupong]Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
  • [ 3 ] [Tang, Penghao]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Xiong, Fangzhu]Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Bi, Zhaoxia]Lund Univ, Dept Phys, Div Solid State Phys & NanoLund, S-22100 Lund, Sweden
  • [ 6 ] [Pandit, Santosh]Chalmers Univ Technol, Dept Biol & Biol Engn, S-41296 Gothenburg, Sweden
  • [ 7 ] [Mijakovic, Ivan]Chalmers Univ Technol, Dept Biol & Biol Engn, S-41296 Gothenburg, Sweden
  • [ 8 ] [Lam, Lisa]Univ Gothenburg, Dept Rheumatol & Inflammat Res, S-41346 Gothenburg, Sweden
  • [ 9 ] [Wasen, Caroline]Univ Gothenburg, Dept Rheumatol & Inflammat Res, S-41346 Gothenburg, Sweden
  • [ 10 ] [Erlandsson, Malin]Univ Gothenburg, Dept Rheumatol & Inflammat Res, S-41346 Gothenburg, Sweden
  • [ 11 ] [Bokarewa, Maria]Univ Gothenburg, Dept Rheumatol & Inflammat Res, S-41346 Gothenburg, Sweden
  • [ 12 ] [Dong, Jichen]Ulsan Natl Inst Sci & Technol, Inst Basic Sci, Ctr Multidimens Carbon Mat, Ulsan 44919, South Korea
  • [ 13 ] [Ding, Feng]Ulsan Natl Inst Sci & Technol, Inst Basic Sci, Ctr Multidimens Carbon Mat, Ulsan 44919, South Korea
  • [ 14 ] [Mijakovic, Ivan]Tech Univ Denmark, Novo Nordisk Fdn Ctr Biosustainabil, DK-2800 Lyngby, Denmark
  • [ 15 ] [Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Peoples R China
  • [ 16 ] [Sun, Jie]Fujian Sci & Technol Innovat Lab Optoelect Inform, Fuzhou 350116, Peoples R China

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来源 :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

年份: 2022

期: 5

卷: 14

页码: 7152-7160

9 . 5

JCR@2022

9 . 5 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:66

JCR分区:1

中科院分区:2

被引次数:

WoS核心集被引频次: 35

SCOPUS被引频次: 36

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 9

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