In　this　paper,　an　effective　method　to　realize　almost　in-phase　mode　phase-locked　output　on　laser　diode　array　(LDA)　chip　is　proposed　by　using　a　one-half　period　lateral　shift　face-to-face　mutual　injection　Talbot　cavity.　The　phase-locking　model　is　complemented　by　involving　interference　effect　to　modify　mutual　injection　ratios　between　laser　elements.　Based　on　the　modified　mutual　injection　Lang-Kobayashi　(L-K)　rate　equation,　the　phase-locking　process　under　different　fill　factors　(FFs),　coupling　coefficients　(CCs)　and　wavelength　detunings　(Delta　lambda　s)　is　comprehensively　analyzed.　As　a　result,　the　allowable　wavelength　detuning　range　is　obviously　expanded,　and　the　robust　in-phase　mode　phase-locked　output　can　be　obtained　theoretically　under　specific　configuration　of　FF　and　CC.