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作者:

Pan, Shijie (Pan, Shijie.) | Feng, Shiwei (Feng, Shiwei.) (学者:冯士维) | Li, Xuan (Li, Xuan.) | Bai, Kun (Bai, Kun.) | Lu, Xiaozhuang (Lu, Xiaozhuang.) | Zhang, Yamin (Zhang, Yamin.) | Zhou, Lixing (Zhou, Lixing.) | Rui, Erming (Rui, Erming.) | Jiao, Qiang (Jiao, Qiang.) | Tian, Yu (Tian, Yu.)

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摘要:

This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors based on the pulsed current-voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the DVTs at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.

关键词:

gallium nitride (GaN) drain voltage transients (DVTs) high-electron-mobility transistors (HEMTs) trap capacitance deep-level transient spectroscopy (C-DLTS)

作者机构:

  • [ 1 ] [Pan, Shijie]Beijing Univ Technol, Inst Semicond Device Reliabil Phys, Beijing 100124, Peoples R China
  • [ 2 ] [Feng, Shiwei]Beijing Univ Technol, Inst Semicond Device Reliabil Phys, Beijing 100124, Peoples R China
  • [ 3 ] [Li, Xuan]Beijing Univ Technol, Inst Semicond Device Reliabil Phys, Beijing 100124, Peoples R China
  • [ 4 ] [Bai, Kun]Beijing Univ Technol, Inst Semicond Device Reliabil Phys, Beijing 100124, Peoples R China
  • [ 5 ] [Lu, Xiaozhuang]Beijing Univ Technol, Inst Semicond Device Reliabil Phys, Beijing 100124, Peoples R China
  • [ 6 ] [Zhang, Yamin]Beijing Univ Technol, Inst Semicond Device Reliabil Phys, Beijing 100124, Peoples R China
  • [ 7 ] [Zhou, Lixing]Beijing Univ Technol, Inst Semicond Device Reliabil Phys, Beijing 100124, Peoples R China
  • [ 8 ] [Rui, Erming]China Astronaut Stand Inst, Beijing 100071, Peoples R China
  • [ 9 ] [Jiao, Qiang]China Astronaut Stand Inst, Beijing 100071, Peoples R China
  • [ 10 ] [Tian, Yu]China Astronaut Stand Inst, Beijing 100071, Peoples R China

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来源 :

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

ISSN: 0268-1242

年份: 2022

期: 9

卷: 37

1 . 9

JCR@2022

1 . 9 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:41

JCR分区:3

中科院分区:4

被引次数:

WoS核心集被引频次: 3

SCOPUS被引频次: 4

ESI高被引论文在榜: 0 展开所有

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