Mn3Ge,　a　typical　member　of　the　Heusler　family,　has　a　high　spin　polarization　and　large　spin　Hall　angle,　making　it　a　potential　material　for　spintronic　devices.　Regarded　as　a　topological　Weyl　semi-metal,　Mn3Ge　could　be　applied　in　topological　spintronics　owing　to　its　special　Fermi-arc-type　surface　states　and　various　spin　transport　properties.　In　this　study,　we　grew　high-quality　perpendicularly　magnetized　Mn3Gefilms　through　magnetron　sputtering.　X-ray　diffraction　(XRD)　showed　that　hexagonal　antiferromagnetic　Mn3Ge　was　mixed　with　tetragonal　ferromagnetic　Mn3Ge.　Thickness-dependent　double-phase　Mn3Ge　films　with　large　magnetic　anisotropy　and　robust　anomalous　Hall　effect　(AHE)　were　obtained.　The　triangular　spin　structure　of　hexagonal　Mn3Ge　enhances　the　AHE;　however,　it　shrinks　the　coercivity　of　the　tetragonal　ferromagnetic　property.　This　manipulation　of　coexisting　multi-phases　comes　from　the　strain　of　the　substrate　during　growth,　achieved　by　controlling　the　film　thickness.　Structural,　magnetic,　and　transport　measurements　demonstrated　stress　modulation　of　the　defect　pinning,　magnetic　anisot-ropy,　and　spin　transport　properties.　The　coexistence　of　antiferromagnetic　and　ferromagnetic　Mn3Ge　provides　the　possibility　of　a　new　generation　of　Mn3X-based　devices　for　applications　in　spin-torque　memories.