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作者:

Zhang, Fei (Zhang, Fei.) | Zhou, Yingchun (Zhou, Yingchun.) | Chen, Zhipeng (Chen, Zhipeng.) | Wang, Meng (Wang, Meng.) | Ma, Zhuangzhuang (Ma, Zhuangzhuang.) | Chen, Xu (Chen, Xu.) | Jia, Mochen (Jia, Mochen.) | Wu, Di (Wu, Di.) | Xiao, Jiawen (Xiao, Jiawen.) (学者:肖家文) | Li, Xinjian (Li, Xinjian.) | Zhang, Yu (Zhang, Yu.) | Shi, Zhifeng (Shi, Zhifeng.) | Shan, Chongxin (Shan, Chongxin.)

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EI Scopus SCIE

摘要:

Flexible scintillator screens with environmental stability, high sensitivity, and low cost have emerged as candidates for X-ray imaging applications. Here, a large-scale and cost-efficient solution synthesis of the vacancy-ordered double perovskite Cs2ZrCl6, which is characterized by thermal activation delayed fluorescence (TADF) dominated by triplet emission under X-ray irradiation, is demonstrated. The large Stokes shift and efficient luminescence collection of TADF effectively ensure the light outcoupling efficiency. Further, flexible X-ray scintillator screens with an area of 400 cm(2) are prepared using poly(dimethylsiloxane) (PDMS) as the carrier, exhibiting excellent scintillation properties with light yields as high as 49 400 photons MeV-1, spatial resolutions up to 18 lp mm(-1) and detection limits as low as 65 nGy s(-1). Finally, the high-quality imaging results of non-planar and dynamic objects by such screens are demonstrated. It is believed that the explored Cs2ZrCl6@PDMS flexible scintillator screens would offer a big step toward expanding the application range of scintillators in different environments.

关键词:

2ZrCl large-area screens (6) Cs stability flexible X-ray scintillator screens thermal activation delay fluorescence

作者机构:

  • [ 1 ] [Zhang, Fei]Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 2 ] [Chen, Zhipeng]Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 3 ] [Wang, Meng]Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 4 ] [Ma, Zhuangzhuang]Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 5 ] [Chen, Xu]Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 6 ] [Jia, Mochen]Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 7 ] [Wu, Di]Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 8 ] [Li, Xinjian]Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 9 ] [Shi, Zhifeng]Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 10 ] [Shan, Chongxin]Zhengzhou Univ, Sch Phys & Microelect, Minist Educ, Key Lab Mat Phys, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 11 ] [Zhou, Yingchun]Beijing Univ Technol, Fac Mat & Mfg, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 12 ] [Xiao, Jiawen]Beijing Univ Technol, Fac Mat & Mfg, Inst Microstruct & Property Adv Mat, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 13 ] [Zhang, Yu]Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

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来源 :

ADVANCED MATERIALS

ISSN: 0935-9648

年份: 2022

期: 43

卷: 34

2 9 . 4

JCR@2022

2 9 . 4 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:66

JCR分区:1

中科院分区:1

被引次数:

WoS核心集被引频次: 153

SCOPUS被引频次: 161

ESI高被引论文在榜: 7 展开所有

  • 2024-11
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  • 2024-9
  • 2024-9
  • 2024-7
  • 2024-5
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