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作者:

Yang, Kai-Hua (Yang, Kai-Hua.) | Wu, Yi-Fan (Wu, Yi-Fan.) | Wang, Huai-Yu (Wang, Huai-Yu.) | Wang, Bo-Yang (Wang, Bo-Yang.) | Liang, Xiao-hui (Liang, Xiao-hui.)

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摘要:

We investigate the interplay of quantum interference effects and the electronic correlation on the transport through T-shaped spinless double quantum dots coupled to Luttinger liquid leads by using the nonequilibrium Green's function method. We find that the weak intralead Coulomb interaction leads to a zero-bias antiresonance dip in the differential conductance for small interdot tunneling coupling, which is distinct destructive interfer-ence characteristic. In particular, an intriguing Fano antiresonance profile for asymmetrically coupling to the Luttinger liquid leads is exhibited, consistent with the experiment findings but different physics screening origin. The strong intralead Coulomb interaction or large interdot coupling tunneling quenches the quantum interfer-ence effects, resulting in the disappearance of Fano antiresonance. The scaling behavior of differential conductance on temperature is presented for different intralead interactions. The relationship between destructive interference and two-channel Kondo effect is given. Our results provide a way of adjusting in and out of antiresonance to achieve quantum interference transistors and of switching by tuning the gate voltage con-trolling the interdot tunneling.

关键词:

Fano antiresonance T-shaped double quantum dot Destructive Interference Luttinger liquid

作者机构:

  • [ 1 ] [Yang, Kai-Hua]Beijing Univ Technol, Fac Sci, Beijing 100124, Peoples R China
  • [ 2 ] [Wu, Yi-Fan]Beijing Univ Technol, Fac Sci, Beijing 100124, Peoples R China
  • [ 3 ] [Liang, Xiao-hui]Beijing Univ Technol, Fac Sci, Beijing 100124, Peoples R China
  • [ 4 ] [Wang, Huai-Yu]Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
  • [ 5 ] [Wang, Bo-Yang]Second Capital Normal Univ, High Sch, Beijing 100037, Peoples R China

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来源 :

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

ISSN: 1386-9477

年份: 2022

卷: 144

3 . 3

JCR@2022

3 . 3 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:41

JCR分区:2

中科院分区:3

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SCOPUS被引频次: 1

ESI高被引论文在榜: 0 展开所有

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