Fabrication　temperature　is　an　important　factor　affecting　the　manufacturability　of　electronic　devices,　especially　for　the　bottom-up　self-assembled　nano-device.　In　this　study,　we　used　a　lateral-bridged　zinc　oxide　(ZnO)　nanowire　array　UV　sensor　as　a　model　to　investigate　the　influence　of　temperature　on　device　performance　over　the　entire　manufacturing　process,　from　sensor　fabrication　to　packaging.　We　found　that　annealing　of　the　SiO2　substrate　would　make　ZnO　seed　layer　on　top　of　it　more　compact　and　uniform,　and　hence　improve　the　lateral　orientation　and　uniformity　of　ZnO　nanowires　grown　from　the　seed　layer.　With　the　annealed　substrate,　the　light-to-dark　current　ratio　increased　by　two　orders　of　magnitude.　On　the　contrary,　annealing　the　ZnO　seed　layer　would　deteriorate　the　light-to-dark　current　ratio　of　the　sensor,　because　annealing　caused　most　of　the　grains　in　the　seed　layer　to　become　vertically　aligned,　which　in　turn　affected　the　lateral　growth　of　ZnO　nanowire　arrays.　During　the　packaging　process,　the　surface　structure　of　ZnO　nanowires　would　change　if　the　chip　welded　at　a　temperature　of　230　degrees　C　for　2　min,　resulting　in　a　decrease　of　light-to-dark　current　ratio　by　three　orders　of　magnitude.