• 综合
  • 标题
  • 关键词
  • 摘要
  • 学者
  • 期刊-刊名
  • 期刊-ISSN
  • 会议名称
搜索

作者:

Pan, Shijie (Pan, Shijie.) | Feng, Shiwei (Feng, Shiwei.) (学者:冯士维) | Li, Xuan (Li, Xuan.) | Zheng, Xiang (Zheng, Xiang.) | Lu, Xiaozhuang (Lu, Xiaozhuang.) | He, Xin (He, Xin.) | Bai, Kun (Bai, Kun.) | Zhang, Yamin (Zhang, Yamin.) | Zhou, Lixing (Zhou, Lixing.)

收录:

EI Scopus SCIE

摘要:

In this work, we developed the voltage-transient method to characterize the properties of traps in AlGaN/GaN high-electron-mobility transistors (HEMTs) in the OFF-state. By monitoring the drain voltage transients of the HEMTs at various temperatures, three types of trapping mechanism were identified: 1) buffer charge trapping, which occurred on a timescale of approximately 1 ms; 2) charge trapping in the AlGaN layer at the gate-drain edge with the energy level (E-a) of approximately 0.54 eV; and 3) surface charge trapping with E-a of approximately 0.28 eV. In particular, we extracted accurate amplitudes for the first two trapping behaviors and studied the dependence of the trapping effect on the filling bias conditions. The results showed that the buffer charge trapping was primarily affected by the drain voltage, whereas the charge trapping on the drain side of the gate was affected by both the drain and gate voltages; these results were verified by drift-diffusion simulations. In addition, we observed the third trapping behavior, which was apparent in the measurement window beyond 308 K, thus demonstrating the advantages of our method for correctly and effectively monitoring the changes in the peaks in the time constant spectrum.

关键词:

Charge trapping high-electron-mobility transistors (HEMTs) differential amplitude spectrum (DAS) voltage transient GaN

作者机构:

  • [ 1 ] [Pan, Shijie]Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China
  • [ 2 ] [Feng, Shiwei]Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China
  • [ 3 ] [Li, Xuan]Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China
  • [ 4 ] [Zheng, Xiang]Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China
  • [ 5 ] [Lu, Xiaozhuang]Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China
  • [ 6 ] [He, Xin]Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China
  • [ 7 ] [Bai, Kun]Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China
  • [ 8 ] [Zhang, Yamin]Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China
  • [ 9 ] [Zhou, Lixing]Beijing Univ Technol, Coll Microelect, Beijing 100124, Peoples R China

通讯作者信息:

电子邮件地址:

查看成果更多字段

相关关键词:

来源 :

IEEE TRANSACTIONS ON ELECTRON DEVICES

ISSN: 0018-9383

年份: 2021

期: 11

卷: 68

页码: 5541-5546

3 . 1 0 0

JCR@2022

ESI学科: ENGINEERING;

ESI高被引阀值:87

JCR分区:2

被引次数:

WoS核心集被引频次: 11

SCOPUS被引频次: 11

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 0

归属院系:

在线人数/总访问数:215/4516609
地址:北京工业大学图书馆(北京市朝阳区平乐园100号 邮编:100124) 联系我们:010-67392185
版权所有:北京工业大学图书馆 站点建设与维护:北京爱琴海乐之技术有限公司