In　this　study,　the　current-transient　method　has　been　conducted　to　investigate　the　trap　states　in　p-GaN　gate　high-electron-mobility　transistors　(HEMTs)　under　reverse　gate　stress.　An　irregular　threshold　voltage　shift　under　reverse　gate　bias　has　been　observed　through　the　pulsed　transfer　measurements　with　different　delay　times.　It　suggests　that　both　the　hole　insufficiency　and　hole　trapping　are　generated　during　the　reverse　gate　pulse　bias.　With　proper　selection　of　the　delay　time　based　on　the　pulsed　characterizations,　the　hole　detrapping　can　be　effectively　evaluated　after　the　hole　recovery　is　completed.　In　addition,　by　subtracting　the　trapping　behavior　caused　by　the　measurement　condition,　the　actual　detrapping　transient　under　reverse　gate　filling　voltages　can　be　obtained　with　the　current-transient　method.　Three　traps　have　been　observed　with　the　energy　levels　of　0.484,　0.390,　and　0.235　eV.　The　identification　of　hole　traps　may　provide　a　basis　on　the　understanding　of　threshold　voltage　instability　and　further　improvement　of　the　reliability　of　p-GaN　gate　HEMTs.　Published　under　an　exclusive　license　by　AIP　Publishing.