By　using　the　material　of　AlAs　with　high　thermal　conductivity　in　the　n-type　distributed　Bragg　reflector　(DBR)　and　increasing　the　thickness　ratio　of　the　AlAs　layer,　the　thermal　conductivity　of　N-side　DBR　was　greatly　increased　and　the　high　temperature　performance　of　the　device　was　improved.　VCSELs　devices　were　produced,　and　the　results　of　DC　test　under　different　temperature　conditions　showed　that　the　maximum　thermal　rollover　optical　output　power　was　9　mW　at　25,　and　the　maximum　optical　output　power　of　5　mW　was　achieved　at　a　thermal　rollover　current　of　11　mA　at　85,　showing　high　DC　performance　of　high　temperature　operation.　The　far　field　divergence　angle　was　less　than　17°.　Eye　diagrams　were　clear　under　different　temperature　conditions　varying　from　0　to　70,　indicating　that　the　devices　met　the　requirements　of　high　temperature　25　Gbit/s　operation.　©　2019,　Science　Press.　All　right　reserved.