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作者:

Zhang, Fei (Zhang, Fei.) | Zhou, Yingchun (Zhou, Yingchun.) | Chen, Zhipeng (Chen, Zhipeng.) | Niu, Xiaowei (Niu, Xiaowei.) | Wang, Heyong (Wang, Heyong.) | Jia, Mochen (Jia, Mochen.) | Xiao, Jiawen (Xiao, Jiawen.) (学者:肖家文) | Chen, Xu (Chen, Xu.) | Wu, Di (Wu, Di.) | Li, Xinjian (Li, Xinjian.) | Shi, Zhifeng (Shi, Zhifeng.) | Shan, Chongxin (Shan, Chongxin.)

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EI Scopus SCIE

摘要:

Lead-halide perovskites have received extensive attention in X-ray imaging applications recently. However, their poor stability, lead toxicity, and strong light self-absorption seriously limit the commercial development. Here, we report a vacancy-ordered Cs2HfCl6 double perovskite for scintillators applications. The Cs2HfCl6 microcrystals (MCs) are characterized by broadband blue emission with a large Stokes shift. Joined experimental-theoretical characterizations reveal the highly localized charge distribution in Cs2HfCl6 and structural distortion of [HfCl6](2-) octahedron in the excited state favor the formation of self-trapped excitons (STEs), which contribute to the broadband emission. Benefiting from the radioluminescence of STEs with negligible self-absorption, the light yield of Cs2HfCl6 scintillator reaches 21700 photons/MeV, and the detection limit is 55 nGy(air) s(-1). Additionally, the Cs2HfCl6 scintillator exhibits extremely low hygroscopicity and good resistance to X-ray irradiation. Further, a large-area scintillator screen (20x20 cm(2)) is fabricated by combining scrape-coating and soft-pressing techniques, showing a spatial resolution of 11.2 lp mm(-1). Given the high spatial resolution and fast light decay of this scintillator screen, static X-ray imaging of bulky objects is realized, and dynamic X-ray imaging of a rotating chopping fan is demonstrated without ghosting effects. These results demonstrate the great commercial promise of Cs2HfCl6 scintillation screens for indirect X-ray detection.

关键词:

scintillator screens cesium hafnium chloride large-area X-ray imaging stability

作者机构:

  • [ 1 ] [Zhang, Fei]Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 2 ] [Chen, Zhipeng]Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 3 ] [Jia, Mochen]Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 4 ] [Chen, Xu]Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 5 ] [Wu, Di]Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 6 ] [Li, Xinjian]Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 7 ] [Shi, Zhifeng]Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 8 ] [Shan, Chongxin]Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Daxue Rd 75, Zhengzhou 450052, Peoples R China
  • [ 9 ] [Zhou, Yingchun]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 10 ] [Niu, Xiaowei]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 11 ] [Xiao, Jiawen]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 12 ] [Wang, Heyong]Ist Italiano Tecnol, Ctr Nano Sci & Technol PoliMi, I-20133 Milan, Italy

通讯作者信息:

  • [Shi, Zhifeng]Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Daxue Rd 75, Zhengzhou 450052, Peoples R China;;[Xiao, Jiawen]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100124, Peoples R China;;

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来源 :

LASER & PHOTONICS REVIEWS

ISSN: 1863-8880

年份: 2023

期: 5

卷: 17

1 1 . 0 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:17

被引次数:

WoS核心集被引频次: 21

SCOPUS被引频次: 23

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 7

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