Vertically　oriented　graphene　(VG),　owing　to　its　sharp　edges,　non-stacking　morphology,　and　high　surface-to-volume　ratio　structure,　is　promising　as　a　consummate　material　for　the　application　of　photoelectric　detection.　However,　owing　to　high　defect　and　fast　photocarrier　recombination,　VG-absorption-based　detectors　inherently　suffer　from　poor　responsivity,　severely　limiting　their　viability　for　light　detection.　Herein,　we　report　a　high-performance　photodetector　based　on　a　VG/indium　tin　oxide　(ITO)　composite　structure,　where　the　VG　layer　serves　as　the　light　absorption　layer　while　ITO　works　as　the　carrier　conduction　channel,　thus　achieving　the　broadband　and　high　response　nature　of　a　photodetector.　Under　the　illumination　of　infrared　light,　photoinduced　carriers　generated　in　VG　could　transfer　to　the　floating　ITO　layer,　which　makes　them　separate　and　diffuse　to　electrodes　quickly,　finally　realizing　large　photocurrent　detectivity.　This　kind　of　composite　structure　photodetector　possesses　a　room　temperature　photoresponsivity　as　high　as　~0.7　A/W　at　a　wavelength　of　980　nm,　and　it　still　maintains　an　acceptable　performance　at　temperatures　as　low　as　87　K.　In　addition,　a　response　time　of　5.8　s　is　observed,　~10　s　faster　than　VG　photodetectors.　Owing　to　the　unique　three-dimensional　morphology　structure　of　the　as-prepared　VG,　the　photoresponsivity　of　the　VG/ITO　composite　photodetector　also　presented　selectivity　of　incidence　angles.　These　findings　demonstrate　that　our　novel　composite　structure　VG　device　is　attractive　and　promising　in　highly　sensitive,　fast,　and　broadband　photodetection　technology.