Thermoelectric　(TE)　technology　enables　direct　conversion　between　thermal　and　electrical　energies　and　thus　has　been　regarded　as　an　alternative　for　energy　harvesting　and　refrigeration.　Bismuth　telluride　(Bi2Te3)　is　the　most　widely　used　TE　material　at　room　temperature　due　to　its　high　figure　of　merit　(similar　to　1).　Since　the　first　publication　on　the　electrodeposition　of　Bi2Te3　films　in　1994,　a　large　number　of　publications　has　emerged　in　the　last　two　decades,　owing　to　its　advantages　such　as　simple　and　safe　preparation,　high　deposition　rate,　convenient　micromachining,　good　compatibility　to　semiconductor　microfabrication　techniques　and　so　on.　This　article　reviews　the　recent　research　progress　in　the　electrodeposition　of　Bi2Te3　and　its　application　in　TE　devices.　Additionally,　an　outlook　towards　the　future　development　of　this　area　has　also　been　discussed.