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Author:

Qian, Fengsong (Qian, Fengsong.) | Deng, Jun (Deng, Jun.) | Xu, Chen (Xu, Chen.) | Dong, Yibo (Dong, Yibo.) | Hu, Liangchen (Hu, Liangchen.) | Fu, Guosheng (Fu, Guosheng.) | Xie, Yiyang (Xie, Yiyang.) | Chang, Pengying (Chang, Pengying.) | Sun, Jie (Sun, Jie.)

Indexed by:

EI Scopus SCIE

Abstract:

Graphene has unique advantages in ultrabroadband detection. However, nowadays graphene-based photodetectors cannot meet the requirements for practical applications due to their poor performance. Here, we report a graphene-silicon-graphene Schottky junction photodetector assisted by field effect. Two separate graphene sheets are located on both sides of the n-doped silicon to form two opposite lateral series heterojunctions with silicon, and a transparent top gate is designed to modulate the Schottky barrier. Low doping concentration of silicon and negative gate bias can significantly raise the barrier height. Under the combined action of these two measures, the barrier height increases from 0.39 eV to 0.77 eV. Accordingly, the performance of the photodetector has been greatly improved. The photoresponsivity of the optimized device is 2.6 A/W at 792 nm, 1.8 A/W at 1064 nm, and 0.42 A/W at 1550 nm, and the on/off photo-switching ratio reaches 10(4). Our work provides a feasible solution for the development of graphene-based optoelectronic devices.

Keyword:

Author Community:

  • [ 1 ] [Qian, Fengsong]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Deng, Jun]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Hu, Liangchen]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Xie, Yiyang]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 6 ] [Chang, Pengying]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 7 ] [Dong, Yibo]Univ Shanghai Sci & Technol, Inst Photon Chips, Shanghai 200093, Peoples R China
  • [ 8 ] [Fu, Guosheng]Beihang Univ, Fert Beijing Inst, Beijing 100191, Peoples R China
  • [ 9 ] [Fu, Guosheng]Beihang Univ, Sch Microelect, Beijing 100191, Peoples R China
  • [ 10 ] [Sun, Jie]Fuzhou Univ, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350100, Peoples R China
  • [ 11 ] [Sun, Jie]Mindu Innovat Lab, Fuzhou 350100, Peoples R China

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Source :

OPTICS EXPRESS

ISSN: 1094-4087

Year: 2022

Issue: 21

Volume: 30

Page: 38503-38512

3 . 8

JCR@2022

3 . 8 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:41

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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