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Author:

Huang, Yi-wen (Huang, Yi-wen.) | Zhang, Wan-rong (Zhang, Wan-rong.) (Scholars:张万荣) | Shen, Pei (Shen, Pei.) | Hu, Ning (Hu, Ning.) | Huang, Lu (Huang, Lu.)

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CPCI-S EI Scopus

Abstract:

This paper presents an inductorless SiGe HBT low noise amplifier (LNA) using JAZZ 0.35 mu m SiGe BiCMOS technology. The LNA is designed with multiple resistive feedback structure. In addition, peaking capacitors at both emitters were adopted to compensate for the gain rolloff at higher frequency. The results of simulation show that the LNA has over 22.3dB gain with less than 1dB variation, noise figure varies between 2.4 to 3.3dB, and input and output reflections (S-11 and S-22) are both less than -12dB over the entire band. The entire results exhibit the LNA has good performance. The key advantage of this work is the elimination of inductors thus the chip area can be greatly saved, which is clearly an attractive benefit.(1).

Keyword:

SiGe HBT induetorless low-noise amplifier ultra-wide band

Author Community:

  • [ 1 ] [Huang, Yi-wen]BJUT, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang, Wan-rong]BJUT, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Shen, Pei]BJUT, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Hu, Ning]BJUT, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Huang, Lu]BJUT, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China

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Source :

2009 IEEE 8TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS

Year: 2009

Page: 258-261

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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