Cu-Cr-O　thin　films　were　prepared　by　the　RF　magnetron　sputtering　technology　on　quartz　substrates　with　a　sintered　CuCrO2　ceramic　as　a　target.　The　influence　of　annealing　temperature　on　the　structural　and　optoelectronic　properties　of　the　Cu-Cr-O　thin　films　was　investigated.　The　X-ray　diffraction　analysis　reveals　that　the　Cu-Cr-Ofilm　annealed　at　973Khas　a　delafossite　structure　without　other　phases,　and　the　crystallinity　of　the　film　increases　with　the　increase　of　the　annealing　temperature.　Based　on　the　measurements　by　ultraviolet-visible　spectroscopy　and　the　electrical　property,　the　optical　transmittance　increases　and　the　conductivity　decreases　as　the　annealing　temperature　increases.　The　maximum　optical　transmittance　and　conductivity　of　the　film　annealed　at　973-1273K　are　50%　and　0.12S/cm,　respectively.　The　results　by　scanning　electron　microscopy　indicate　that　presence　of　micro-cracks　in　the　film　could　be　the　main　reason　for　the　decreased　electrical　conductivity.　©　2019,　Editorial　Department　of　Journal　of　the　Chinese　Ceramic　Society.　All　right　reserved.