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作者:

Zhang, Yakun (Zhang, Yakun.) | An, Tong (An, Tong.) | Qin, Fei (Qin, Fei.) | Gong, Yanpeng (Gong, Yanpeng.) | Dai, Yanwei (Dai, Yanwei.) | Chen, Pei (Chen, Pei.)

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摘要:

PP IGBTs have been widely used in high-temperature electronic field. The study of thermal contact resistance is very important for thermal management, reliability evaluation, life prediction. Thermal contact resistance is the significant part in the total thermal resistance. The influence of five factors of surface morphology parameters on thermal contact resistance is studied in this paper. This paper used design of experiment (DOE) to design the simulation group, a total of 22 simulation groups. The submodel technology is used in finite element analysis to realize the simulation of heat transfer. The results of DOE show that the significant factors are the relative real contact area, the distance between asperities, the angle of asperity, and the significant interaction factor between the relative real contact area and the angle of asperity. © 2022 IEEE.

关键词:

Surface roughness Morphology Design of experiments Contact resistance Finite element method Surface morphology Insulated gate bipolar transistors (IGBT) Heat transfer

作者机构:

  • [ 1 ] [Zhang, Yakun]Beijing University of Technology, Institute of Electronics Packaging Technology and Reliability, Beijing Key Laboratory of Advanced Manufacturing Technology, Beijing, China
  • [ 2 ] [An, Tong]Beijing University of Technology, Beijing, China
  • [ 3 ] [Qin, Fei]Beijing University of Technology, Beijing, China
  • [ 4 ] [Gong, Yanpeng]Beijing University of Technology, Beijing, China
  • [ 5 ] [Dai, Yanwei]Beijing University of Technology, Beijing, China
  • [ 6 ] [Chen, Pei]Beijing University of Technology, Beijing, China

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年份: 2022

语种: 英文

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