During　the　service　process,　the　plastic　deformation　of　Al　metallization　layer　on　IGBT　surface　will　lead　to　the　reconstruction　of　Al　metallization　layer,　which　will　seriously　harm　the　electrical　interconnection　between　IGBT　chip　and　bonding　line.　In　this　paper,　a　single　IGBT　chip　and　its　interconnection　structure　were　selected　to　establish　a　finite　element　model,　and　the　temperature　and　stress　distribution　law　and　plastic　deformation　law　of　Al　metallization　layer　under　power　cycle　were　obtained　through　electro-thermal-mechanical　indirect　coupling　analysis,　which　provided　help　to　evaluate　the　reliability　of　Al　metallization　layer　of　IGBT　module.　Finite　element　results　show　that　the　power　IGBT　chip　under　circulating　load　Al　metallization　layer　under　the　surface　of　the　uneven　distribution　of　stress　and,　center　position　and　bonding　line　response　location　near　Al　metallization　layer　on　the　stress　and　the　maximum　equivalent　plastic　strain　is　larger,　indicating　that　Al　metallization　layer　center　and　pin　locations　are　more　likely　to　produce　reliability　problems.　©　2022　IEEE.