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作者:

Sun, Guoli (Sun, Guoli.) | Dai, Yanwei (Dai, Yanwei.) | Qin, Fei (Qin, Fei.) | Li, Baoxia (Li, Baoxia.)

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EI Scopus

摘要:

Warpage has exerted great influence during the fabrication of TSV interposer wafer. A building blocks inspired model is presented to predict the warpage of large scale complex TSV interposer wafer. Due to the sophisticated redistribution layer (RDL) pattern and large number and nonuniform distribution of TSV-Cu, accurately predicting wafer warpage evolution is still a big challenge during the fabrication. In this article, a novel method called building blocks inspired (BBI) is proposed firstly for large scale TSV interposer wafer packaging structure. Firstly, according to the periodic representative volume element (RVE) homogeneous theory, an equivalent finite element model was built and the warpage evolution is predicted and analyzed by element death-birth technique. Then, experiment study was conducted and the validation of simulation results was confirmed by using FSM system. What's more, based on the model before, a more accurate equivalent model using BBI method was built to predict the wafer warpage. It was found that as the number of building blocks in the pattern area increases, the error between simulation and experiment becomes smaller. Besides, the direction of wafer warpage is constantly changing during manufacturing, and the greatest wafer warpage occurs during the bonding process in the middle of the process, not at the end of the manufacturing process. In conclusion, this study presents a novel insight on modeling method to solve the sophisticated structure such as RDL and TSV-Cu. Some useful suggestions were provided for the convenience of engineering practice to predict wafer level warpage. © 2022 IEEE.

关键词:

Electronics packaging Wafer bonding Homogenization method Finite element method Three dimensional integrated circuits Forecasting

作者机构:

  • [ 1 ] [Sun, Guoli]Beijing University of Technology, Faculty of Materials and Manufacturing, Beijing, China
  • [ 2 ] [Dai, Yanwei]Beijing University of Technology, Faculty of Materials and Manufacturing, Beijing, China
  • [ 3 ] [Qin, Fei]Beijing University of Technology, Faculty of Materials and Manufacturing, Beijing, China
  • [ 4 ] [Li, Baoxia]Xi'an Microelectronics Technology Institute, Xi'an, China

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年份: 2022

语种: 英文

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SCOPUS被引频次: 2

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