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Based on a actual IGBT module test chip, a two-dimensional model of Al bonding wire between IGBT chip and Direct Copper Bonded (DCB) is established. The finite element analysis of thermal-stress coupling is carried out using commercial software ABAQUS, by changing the height of the bonding wire peak point, the transverse position of the bonding wire peak point and the second welding point. The thermal stress of Al bonding wires with different shape parameters at the same temperature is simulated, and the maximum thermal stress and its position is determined. The results show that the maximum thermal stress always exists at the junction between the first bonding point and the metallized layer, and increasing the height of the peak point can reduce the thermal stress. The minimum thermal stress on the bonding wire is 91.93 MPa. © 2022 IEEE.
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年份: 2022
语种: 英文
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