Press　Pack　IGBT(PP　IGBT)　devices　often　work　under　high　voltage　and　high　current　working　conditions,　and　a　multi-chip　parallel　structure　is　often　used　inside　the　PP　IGBT　device　package.　In　this　structure,　the　multi-chip　layout　has　an　important　influence　on　the　temperature　distribution　of　chips.　In　addition,　the　chip　temperature　is　closely　related　to　the　reliability　of　the　PP　IGBT　device.　Therefore,　it　is　of　great　significance　to　study　the　influence　of　the　internal　chip　layout　of　the　PP　IGBT　device　on　the　temperature　distribution　of　the　chip.　In　this　paper,　the　finite　element　model　of　the　PP　IGBT　device　is　established,　and　the　electro-thermal　coupling　simulation　is　carried　out,　and　simulate　the　temperature　change　of　each　chip　inside　the　device　under　the　condition　of　power　cycle.　First,　chip　temperature　distributions　were　compared　for　devices　containing　a　single　IGBT　chip,　four　IGBT　chips　and　nine　IGBT　chips.　The　junction　temperature　of　the　chip　is　shown　as　a　function　of　time.　Then,　the　influence　of　the　chip　separation　distance　on　the　temperature　was　considered,　and　the　chip　temperature　distribution　was　compared　under　the　layouts　where　each　chip　and　the　adjacent　chips　were　separated　by　2mm　and　4mm,　respectively.　After　analyzing　the　results　of　the　finite　element　simulation,　it　is　found　that　due　to　the　close　position　of　the　multiple　chips　connected　in　parallel　inside　the　PP　IGBT　device,　thermal　coupling　effect　between　chips.　This　coupling　effect　affects　the　temperature　distribution　of　the　chip　and　makes　the　junction　temperature　higher.　And　the　more　chips　and　the　closer　the　chip　distance,　the　more　obvious　the　effect　of　this　coupling　effect　on　the　chip　temperature　distribution.　©　2022　IEEE.