Different　from　the　typical　wire-bonded　IGBT　(　insulated　gate　bipolar　transistor　)　modules,　Press-pack　IGBT　(PP-IGBT)　has　the　advantage　of　double-side　cooling,　which　can　effectively　improve　the　efficiency　of　heat　dissipation　and　has　been　widely　used.　PP-IGBT　has　an　asymmetric　structure,　which　results　in　a　different　heat　dissipation　path　on　the　collector　side　from　that　on　the　emitter　side.　Thermal　contact　resistance　is　an　important　parameter　of　PP-　IGBT,　the　increase　of　surface　roughness　between　the　internal　contact　surfaces　of　the　device　will　change　the　thermal　contact　resistance　of　the　interface,　which　will　affect　the　heat　dissipation　efficiency　of　the　device.　And　then　reduce　the　life　and　reliability　of　the　device.　Therefore,　it　is　very　important　to　study　the　effect　of　the　thermal　contact　resistance　on　the　heat　dissipation　performance　of　the　PP-IGBT.　In　this　paper,　ABAQUS　software　is　used　to　conduct　thermalel-ectrical-structural　coupling　analysis　on　PP-IGBT　module　3D　finite　element　model,　and　the　finite　element　model　after　the　change　of　contact　thermal　resistance　is　calculated　and　compared.　The　results　show　that　the　collector　side　heat　dissipation　path　can　take　away　more　heat　than　the　emitter　side　heat　dissipation　path,　and　the　heat　dissipation　efficiency　of　device　decreases　with　thermal　contact　resistance　increases.　It　will　be　helpful　to　optimize　PP-IGBT　and　make　the　service　life　of　the　device　longer.　©　2022　IEEE.