The　resistive　switching　(RS)　of　Au/BiFeO3/SrRuO3　samples　was　shown　to　be　controllable　by　using　a　thermal　treatment　and　an　electrical　stressing　method.　Such　a　modulation　of　resistive　switching　effect　can　be　associated　to　the　oxygen　vacancy　movement　and　redistribution　within　the　BiFeO3　thin　film　and　the　trapping/detrapping　of　charge　carriers　at　the　interfaces.　After　the　application　of　a　negative　voltage　to　the　thin　film　for　a　stressing　period,　a　resistive　switching　reversal　effect　occurred　and　the　current　retention　ability　in　the　low　resistance　state　increased,　indicating　an　increase　in　the　trap　density　at　the　interface　and　an　enhancement　of　the　charge　carrier　trapping　ability.　The　trap　density,　trap　level,　and　Schottky　barrier　height　all　display　corresponding　trends　in　their　values　as　a　result　of　the　modulation　of　RS　effect.　The　results　indicate　that　the　greater　the　accumulation　of　oxygen　vacancies　at　any　the　film/electrode　interface,　when　a　reverse　bias　is　applied　the　higher　the　resistance　ratio　was　under　reverse　bias.　Its　diffusion　process　was　likely　to　be　hindered　and　the　trapped　charge　carriers　could　be　retained　after　a　long　time　of　electrical　stressing.