Ferroelectric　materials　have　been　very　active　in　recent　years　as　the　infrared　devices　of　photosensitive　films.　Their　good　piezoelectricity,　ferroelectric,　pyroelectric,　photoelectric　and　nonlinear　optical　properties,　and　the　integration　of　semiconductor　technology,　have　a　broad　application　prospect　in　the　field　of　microelectronics　and　optoelectronic　technology.　The　experiment　combined　the　ferroelectric　material　lead　zirconate　titanate　as　the　photosensitive　layer　and　the　GaN　base　high　electron　mobility　transistor　(HEMT).　The　photosensitive　gate　GaN　based　HEMT　device　was　successfully　prepared　and　detected　under　the　light　wavelength　of　365　nm.　After　a　large　number　of　experimental　tests,　the　light　illumination　of　the　device　was　found　in　this　band.　The　saturation　current　reaches　28　mA,　and　the　saturation　current　is　increased　by　12　mA　compared　with　that　without　illumination.　In　addition,　by　reasonably　changing　the　size　of　the　device　structure,　including　the　gate　length　and　the　gate　leakage　distance,　it　is　found　that　the　saturation　output　current　decreases　in　turn　with　the　increase　of　the　gate　length,　while　the　effect　of　the　gap　between　the　gate　leakage　distance　on　the　threshold　voltage　and　the　saturation　current　is　not　significant.　It　can　be　seen　that　changing　the　device　structure　parameters　can　improve　the　performance　of　the　device　and　the　detection　efficiency.　©　2019,　Science　Press.　All　right　reserved.